The SQM200N04-1m1L is Vishay’s first power MOSFET to take advantage of the low resistance contribution and very high current rating of the 7-pin D2PAK package.
When combined with Vishay’s high-density n-channel TrenchFET technology, the result is an ultra-low on-resistance of 1.1 mΩ max at 10 V and 1.3 mΩ max at 4.5 V, allowing the device to minimize conduction losses and operate at lower temperatures. In addition, a continuous drain current of 200 A can be sustained, allowing engineers to create robust designs with an additional margin for safety-critical applications.
The SQM200N04-1m1L is optimized for high-power automotive motor drive applications, including electric power steering. The device is designed and 100% tested in production to withstand single pulse avalanche events of 100 A and 500 mJ. The device also features low thermal resistance of 0.4 °C/W (junction to case), and a wide operating temperature range of − 55 to + 175 °C.
The SQM200N04-1m1L is RoHS-compliant, halogen-free, and 100 % Rg and UIS tested.
Samples and production quantities of the new automotive power MOSFET are available now, with lead times of 14 to 16 weeks for large orders.
More information about Vishay's family of AEC-Q101 qualified TrenchFET power MOSFETs at www.vishay.com/mosfets/automotive-mosfets/