Designed for generic heavy load/ high power through-hole applications requiring low on-state resistance (Rds(on)), Electric Power Steering and battery switches used in internal combustion engine (ICE) cars, and micro and full hybrid vehicles, the new automotive MOSFETs combine IR’s advanced silicon and state-of-the-art packaging technologies to offer significant performance improvements while being compatible with existing design standards.
In standard TO-262 through-hole packages, source and drain leads can add up to 1mOhm of resistance, in addition to the on-state resistance (Rds(on)) of the MOSFET. The new WideLead TO-262 through-hole package reduces lead resistance to less than half a milliohm, greatly reducing conduction losses and heating in the leads to deliver 30 percent more current carrying capability than a traditional TO-262 package for a given operating temperature. Under evaluation, the lead temperature of the WideLead was 30 percent cooler than the standard TO-262 at DC currents of 40 A and 39 percent cooler at 60 A. Furthermore, other packaging enhancements allow the WideLead to deliver 20 percent lower Rds(on) compared with the same MOSFET in a standard TO-262 package.
IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects.
The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.
Pricing begins at US $1.58 each for the AUIRF3004WL and US $1.35 each for the AUIRF1324WL in 100,000-unit quantities. Production orders are available immediately.
More information about the AUIRF3004WL and AUIRF1324WL MOSFETs