CISSOID combines high-voltage, high-temperature SiC power switch with logic-level gate control

March 31, 2011 // By Christoph Hammerschmidt
Semiconductor vendor CISSOID which specializes in high-temperature semiconductor solutions, unveils what it claims to be the first high-temperature silicon carbide high-voltage switch with seamless gate control through a simple logic-level 0/5 V.

The SiC power switch with the type designation CHT-JUPITER is a 600 V normally-off switch rated for 1 A drain current at 225°C. It includes a silicon carbide device, and it is packaged in a hermetically sealed TO-254 metal package, guaranteed for operation from -55 °C up to +225 °C.

CHT-JUPITER's on-resistance ranges from 0.7 Ohms at 25 °C to 1.25 Ohms at 225 °C. Its input capacitance is typically 430 pF. The gate leakage and drain off currents are respectively 160 nA and 250 µA at 225 °C.

A key feature of this new device is its ability to be driven by a 0/5 V logic-level signal, which dramatically reduces the complexity of the driver stage. In particular, CHT-JUPITER greatly simplifies the design of medium-power, high-voltage converters such as Switched Mode Power Supplies (SMPS) and Motor Drives that have to operate in extreme environments. With CHT-JUPITER, electronic engineers can decrease the complexity of their electrical schematics, shorten their bill-of-material, and improve the reliability, weight and size of their systems whilst reducing the need for cooling in their applications.

CHT-JUPITER' data-sheet is available now from CISSOID web site. CHT-JUPITER can be ordered now for sampling and evaluation. Pricing starts at 481€/unit up to 200 units.

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