Superjunction power MOSFET integrates fast body diode, meets AEC-Q101

April 02, 2012 // By Christoph Hammerschmidt
Infineon expands its Automotive power semiconductor lineup with the 650V CoolMOS CFDA. According to the vendor, this is the industry's first Superjunction MOSFET solution with Integrated Fast Body Diode to meet the highest Automotive qualification standard AEC-Q101. The 650V CoolMOS CFDA is particularly designed for resonant topologies such as battery charging, DC/DC converters and HID (High Intensity Discharge) Lighting, also in hybrid and electric vehicles.

The solution combines the benefits of fast switching Superjunction MOSFETs: a better light load efficiency, reduced gate charge, lower switching losses, easy implementation as well as an outstanding reliability. Infineon offers a superior solution to the demand for higher energy efficiency of automotive applications: the new 650V CoolMOS CFDA provides lower area specific on-resistance while offering easy control of switching behavior as well as the highest body diode ruggedness in the market. Lower value of Q rr and Q oss at repetitive commutation on body diode reduces switching losses and turn on/off delay times. The new 650V CoolMOS CFDA complements Infineon's CoolMOS CFD product family and aims at applications that drive rapidly progressing electrification of cars.

Good controllability of rapid current and voltage transients and softer commutation behavior that results in reduced EMI (Electromagnetic Interference) appearance, gives the new series a clear advantage in comparison with competitor parts. Limited voltage overshoot during hard commutation of the body diode enables easier implementation of layout and design. CoolMOS CFDA provides 650V breakdown voltage, which means an increased safety margin compared to 600V.
Samples of IPW65R150CFDA (650V, 150mOhm R dson, TO247 package) are available, EUR 1.85 per piece (10k pieces quantity).

Further information on the new CFDA product family is available at