These results clearly show that the new clip-bonding technique used in the ATPAK delivers improved thermal performance. Furthermore, the ATPAK's ability to dissipate heat better than the DPAK - despite 35% less volume - results in a 6.2℃ lower junction temperature and greater reliability.
With the low levels of R DSON available in ON Semiconductor's ATPAK MOSFETs a number of automotive applications can be transformed. Take, for example, a simple reverse protection circuit, which is normally facilitated with a diode.
With the diode arrangement, even at relatively low currents, the power dissipated in the diode can be significant - around 2.4W at 3A load current. Not only is this expensive in terms of power loss, but will also require a heatsink that takes up precious space and increases the BOM cost.
Using a P-channel MOSFET in a SOT23 package does show some improvement, especially at low values of load current, although at 3A the power losses are broadly comparable to the diode solution.
With the lower R DSON in an ATPAK MOSFET there is a substantial improvement with power losses less than one-tenth of that of a diode (or SOT23 MOSFET) at a 3A load current. Not only is the ATPAK MOSFET smaller in itself, its ultra-efficient performance saves the cost and space required to add a heatsink.
Within ON Semiconductor's wide range of MOSFETs, the automotive ATPAK MOSFET solutions offer a full suite of products for a variety of automotive applications. The future will see the introduction of new N- and P-Channel devices with the ability to handle currents up to 120A (I D Max) and sub-5 milli-Ohm values for R DSON that allow for high-efficiency operation in demanding applications. All current and future devices are Pb-Free / RoHS-Compliant, Halide-Free and also