Rohm‘s 4G SiC MOSFETs claim industrywide lowest RDS(on)

Rohm‘s 4G SiC MOSFETs claim industrywide lowest RDS(on)

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With its new SiC MOSFETs for voltages up to 1200V, Rohm intends to address primarily users in the automotive powertrain sector. Power supplies in industrial plants could also benefit from the advantages of these SiC MOSFETs: According to the manufacturer, the components have the lowest inrush resistance in the industry.
By Christoph Hammerschmidt

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In recent years, the spread of next-generation electric vehicles has accelerated the development of smaller, lighter and more efficient electrical systems. In particular, improved efficiency combined with a smaller main inverter, which plays a central role in the drive system, remains one of the most important challenges requiring further progress in power components.

To improve the range of electric vehicles, vehicle developers are installing batteries with higher capacity. At the same time, the demand for higher voltage batteries (800 volts) is also increasing, to meet the demand for shorter charging times.

To solve these challenges, developers need SiC power devices that offer high dielectric strength with low loss. As a pioneer in the SiC field, Rohm started mass production of SiC MOSFETs as early as 2010. From the beginning, Rohm has expanded its product range to include AEC-Q101 qualified products, with which the company has captured a large market share in on-board chargers (OBC) for motor vehicles.


Rohm was able to reduce the switch-on resistance of these components by 40% per unit area compared to conventional products. Further improvements to the company’s own double-trench structure made this possible without compromising short-circuit resistance. In addition, the significant reduction in parasitic capacitance allows switching losses to be reduced by 50% compared to the manufacturer’s previous generation of SiC MOSFETs.

Rohm’s new fourth-generation SiC MOSFETs feature low on-resistance with high switching speed. This contributes to system miniaturization and lower power consumption in a variety of applications, including inverters and switching power supplies in the automotive industry.

Samples of bare chips are available now. Discrete housings will be offered in the near future.

To further drive technical innovation in next-generation vehicles, Rohm’s next step will be to further expand its range of SiC power devices, combining modularization technologies with peripheral components such as control ICs designed to maximize performance. At the same time, the manufacturer wants to offer solutions to solve customer problems. These include web-based simulation tools designed to reduce application development man-hours and help avoid evaluation problems.

More information: https://www.rohm.com/

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