Cissoid in Belgium has launched a 3-phase silicon carbide SiC Intelligent Power Module (IPM) for e-mobility applications.
The 1200V/450A IPM includes a 3-phase water-cooled SiC MOSFET module with built-in gate drivers. It has a 3.25mΩ RDS(on) on resistance with 8.3mJ turn-on and 11.2mJ turn-off energies at 600V/300A. This reduces losses by at least a factor of three compared to the latest silicon IGBT modules.
The IPM is water-cooled through a lightweight AlSiC pin-fin baseplate for a junction-to-fluid thermal resistance of 0.15°C/W. The power module is rated for junction temperature up to 175°C. The IPM withstands isolation voltages up to 3600V (50Hz, 1min).
The built-in gate driver includes three on-board isolated power supplies (one per phase) delivering each up to 5W to drive the power module up to 25KHz and at ambient temperatures up to 125°C. Peak gate current up to 10A and immunity to high dV/dt (>50KV/µs) enable fast switching of the power module and low switching losses. Protection functions such as Undervoltage Lockout (UVLO), Active Miller Clamping (AMC), Desaturation Detection and Soft-Shut-Down (SSD) ensure the safe drive and reliable operation of the power module in case of fault events.
"Developing and optimizing fast-switching SiC Power Modules and driving them reliably remains a challenge," said Dave Hutton, CEO of Cissoid. "With this new SiC Intelligent Power Modules, which is the outcome of years of experience in the development of power modules and gate drivers for extreme temperature and voltage environments, we are happy to deliver our first IPM samples to early SiC adopters and to support the automotive industry in its transition towards highly efficient E-mobility solutions."