According to Power Integrations, the Q rr of the company’s new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system efficiency. This is particularly important for automotive on-board charger applications that require higher switching frequency to reduce volume and weight, and enables the Qspeed diodes to replace SiC devices.
The QH12TZ600Q uses merged PiN and Schottky diode technology to achieve high performance. Its smooth reverse recovery current transition characteristics not only increase efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in on-board chargers. Devices are available in the compact, 2.5 kV isolated TO-220 package which enables direct mounting to metal heat sinking, facilitating excellent thermal performance.
The new 600 V 12 A Qspeed diodes are priced at $1.17 in 10,000-piece quantities. They are sold through either directly through Power Integrations or one of the company’s authorized worldwide distributors: Digikey, Farnell, Mouser, and RS Components .