Automotive-qualified silicon diode challenges SiC parts

June 23, 2021 // By Christoph Hammerschmidt
Automotive-qualified silicon diode challenges SiC parts
Power Integrations has introduced a 600 V 12 A Qspeed diode, delivering what the company claims to be the industry’s lowest reverse recovery charge (Qrr) for a silicon diode. With a Qrr of just 14 nC at 25 °C, it improves efficiency of the PFC stage of on-board chargers and reduces the thermals of the PFC MOSFETs. The AEC-Q101-qualified QH12TZ600Q offers the same low-switching loss performance of a silicon carbide (SiC) device without the disadvantages of moving to more expensive technology.

According to Power Integrations, the Q rr of the company’s new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system efficiency. This is particularly important for automotive on-board charger applications that require higher switching frequency to reduce volume and weight, and enables the Qspeed diodes to replace SiC devices.

The QH12TZ600Q uses merged PiN and Schottky diode technology to achieve high performance. Its smooth reverse recovery current transition characteristics not only increase efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in on-board chargers. Devices are available in the compact, 2.5 kV isolated TO-220 package which enables direct mounting to metal heat sinking, facilitating excellent thermal performance.

The new 600 V 12 A Qspeed diodes are priced at $1.17 in 10,000-piece quantities. They are sold through either directly through Power Integrations or one of the company’s authorized worldwide distributors: Digikey, Farnell, Mouser, and RS Components .

QH12TZ600Q


Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.