Hua Hong Semiconductor is developing intelligent IGBT technology with on-chip sensors and highly reliable IGBT technology with a new thermal dissipation feature to better serve the growing demand for reliable devices.
The company has the world's first 200mm foundry to provide technology for volume production of Field Stop (FS) IGBT devices and provides leading levels of turn-on voltage drop, turn-off loss, work safety zone and reliability. It also has a full set of IGBT thin wafer BGBM (Backside Grinding / Backside Metallization) processing technology.
The company already has three 200mm fabs in mainland China dedicated to specialist process technology from 1 micro down to 65nm supplying developers of electric cars, wind power and smart home devices with voltages ranging from 600V to 1,700V and currents ranging from 10A to 400A.
The 300mm fab in Wuxi started operation late last year and has a planned capacity of 40,000 300mm wafers a month for discrete devices and mixes technology between the 200mm and and 300mm capacity in a ‘8in +12in’ strategy.
"Hua Hong Semiconductor has the first 12-inch foundry devoted to power discrete semiconductors in the Chinese mainland and relies on the "8-inch +12-inch" strategy to offer a wider range of differentiated technologies and more adequate capacity,” said Fan Heng, Executive Vice President of Hua Hong Semiconductor.
“Recently the company has been aiming at medium- and high-end markets and emerging fields to fully develop IGBT business, and has continuously engaged first-class IGBT product companies at home and abroad to cover application fields such as industry, automotive electronics and white goods, so as to secure its leading position in IGBT foundry,” he said. “Our IGBT technology R&D is progressing well at 12-inch production line, and the company is expected to provide more competitive IGBT foundry solutions for global customers in the future," he added.
The three 200mm wafer fabs (HH Fab1, HH Fab2, and HH Fab3) are based in Jinqiao and Zhangjiang, Shanghai, with