Cissoid’s new IPMs leverage a technology platform that can be rapidly adapted to new voltage, power and cooling requirements. They greatly accelerate the design of SiC-based power converters enabling high efficiency and high power density. The embedded gate driver solves multiple challenges related to fast-switching SiC transistors: negative drive and Active Miller Clamping (AMC) prevent parasitic turn-on; Desaturation detection and Soft-Shut-Down (SSD) react rapidly but safely to short-circuit events; Undervoltage Lockout (UVLO) functions on gate driver and DC bus voltages monitor the proper operation of the system.
Two new liquid-cooled power modules based on a pin fin baseplate are rated for 1200V blocking voltages and for 340A to 550A Maximum Continuous Currents. The On Resistance ranges from 2.53mOhms to 4.19mOhms depending on current rating. The total switching energies are as low as 7.48mJ (Eon) and 7.39mJ (Eoff) at 600V/300A. The co-design of the power module and the gate driver enables optimizing the IPMs for lowest switching energies by carefully tuning dV/dt and controlling voltage overshoots inherent to fast switching. The Reverse Bias Safe Operating Aera (RBSOA) authorizes peak currents up to 600A with DC bus voltages up to 880V making the power modules perfectly safe for 800V battery applications.