Compact SiC MOSFETs for automotive, energy, data center applications

March 18, 2019 //By Christoph Hammerschmidt
OIn Semi SiC MOSFETs
ON Semiconductor has introduced two new silicon carbide (SiC) MOSFET devices. The industrial grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 bring the benefits of wide band gap technology to high growth application areas such as Automotive DC/DC and onboard charger applications for electric vehicles as well as solar, and uninterruptible and server power supplies.

With the announcement, the semiconductor company intends to strengthen its SiC ecosystem that features complementary devices including  SiC diodes  and SiC drivers , plus resources such as device simulation tools, SPICE models and application information to help design and systems engineers meet their high frequency circuit development challenges. 

The new 1200V, 80mΩ SiC MOSFETs align with the needs of modern high switching frequency designs. They combine high power density with efficient operation that contribute to reduce operating costs and system size.  These characteristics also mean that less thermal management is required.

Key features and associated design benefits of the new devices include class-leading low leakage current, a fast intrinsic diode with low reverse recovery charge, which gives steep power loss reduction and supports higher frequency operation and greater power density, and low Eon and Eoff / fast turn ON and OFF combined with low forward voltage to reduce total power losses and therefore cooling requirements. Low device capacitance supports the ability to switch at very high frequencies which reduces EMI issues; meanwhile, higher surge, avalanche capability, and robustness against short-circuits enhances overall ruggedness, gives improved reliability and longer overall life expectancy.

A unique benefit of these SiC MOSFET devices is a patented termination structure that adds to reliability and ruggedness and enhances operational stability. The NVHL080N120SC1 has been designed to withstand high surge currents and offers high avalanche capability and robustness against short circuits.  The AEC-Q101 qualification of the MOSFET plus other SiC devices offered, ensures they can be utilised in in-vehicle applications emerging as a result of increasing electronic content and electrification of powertrains. A maximum operating temperature of 175°C enhances suitability for use in automotive designs as well as other target applications where high density and space constraints are pushing up typical ambient temperatures.

More information can be found here.


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