Diodes has shrunk dual MOSFETs

October 19, 2020 //By Christoph Hammerschmidt
Diodes has shrunk dual MOSFETs
With its package size of just 3.3mm x 3.3mm, the DMT47M2LDVQ  40V dual MOSFET from Diodes Inc. replaces two discrete MOSFETs. Thus, it helps designers to reduce the board space footprint for many automotive applications, from electric seat control to advanced driver-assistance systems (ADAS). 

The DMT47M2LDVQ integrates two n-channel enhancement mode MOSFETs with – according to the vendor - the industry's lowest RDS(ON) for this configuration – just 10.9mΩ at VGS of 10V and ID of 30.2A. This low on-resistance keeps conduction losses to a minimum in applications such as wireless charging or motor control. The typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A, ensures that switching losses are minimized.
The DMT47M2LDVQ’s thermally efficient PowerDI 3333-8 package returns a junction-to-case thermal resistance (Rthjc) of 8.43°C/W, making it possible to develop end applications with a higher power density than with MOSFETs packaged individually. This can reduce the PCB area needed for implementing automotive features, including ADAS. 
Qualified to AEC-Q100 Grade 1, supporting PPAP documentation, and manufactured in IATF 16949 certified facilities, the DMT47M2LDVQ is available now priced at $0.45 in 3000 piece quantities. 

More information: www.Diodes.com.


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