The DMT47M2LDVQ integrates two n-channel enhancement mode MOSFETs with – according to the vendor - the industry's lowest RDS(ON) for this configuration – just 10.9mΩ at VGS of 10V and ID of 30.2A. This low on-resistance keeps conduction losses to a minimum in applications such as wireless charging or motor control. The typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A, ensures that switching losses are minimized.
The DMT47M2LDVQ’s thermally efficient PowerDI 3333-8 package returns a junction-to-case thermal resistance (Rthjc) of 8.43°C/W, making it possible to develop end applications with a higher power density than with MOSFETs packaged individually. This can reduce the PCB area needed for implementing automotive features, including ADAS.
Qualified to AEC-Q100 Grade 1, supporting PPAP documentation, and manufactured in IATF 16949 certified facilities, the DMT47M2LDVQ is available now priced at $0.45 in 3000 piece quantities.
More information: www.Diodes.com.