Both devices are aimed at automotive applications, in particular inverter phase current monitoring and DC-link monitoring applications where Hall-effect has been the preferred solution for more than a decade. As well as traction motor control, the devices are also suited to other embedded applications such as DCDC converters and battery junction boxes or any application that requires high speed, fast response or highly accurate (over)current measurement.
The new CMOS core and factory trim ensure an improvement in thermal sensitivity drift (33%) and thermal offset drift (50%) over the previous generation. It also introduces more on-chip filtering and the ability to detect broken wires, indicating a fault within the electrical distribution. Improved signal-to-noise performance can be achieved by trading resolution against response time and sensor bandwidth through the on-chip filtering.
A slim VA (SIP-4) package houses the MLX91217, allowing for integration into conventional Hall-effect measuring rings. The compact pin-thru package is available with various lead trim and form options, making it compatible with SMD technology PCBs. The MLX91216 is housed in a conventional SOIC8 package for SMD placement. Its IMC technology simplifies the current measurement requiring no external ferromagnetic concentrator ring, making assembly easier as well as reducing size, weight and cost. Both devices are AEC-Q100 Grade 0 qualified for automotive applications and operate over the temperature range -40°C to +150°C.
Melexis - www.melexis.com