The SID1132KQ and SID1182KQ are suitable for driving 650 V, 750 V and 1200 V automotive IGBT and SiC-MOSFET modules, and are rated for peak currents of +/-2.5 A and +/-8 A respectively. The SID1182KQ has the highest output current of any isolated gate driver available and is capable of driving a 600 A /1200 V and 820 A /750 V switch.
The SCALE-iDriver family of single-channel IGBT and SiC-MOSFET drivers uses Power Integrations’ FluxLinkmagneto-inductive bi-directional communication technology which ensures reinforced galvanic isolation between the primary and secondary sides. FluxLink eliminates the need for opto-electronics, which suffer parametric changes with age and thermal degradation that limits operational lifetime. Magnetically-coupled conductors are integrated into the thermoplastic of the eSOP package which offers a CTI level of 600, 9.5 mm creepage and clearance distance, and easily meets automotive 5500m requirements.
“Automotive manufacturers require safe, smart and highly integrated solutions for EV and HEV applications including the main inverter, brake chopper, DC-DC battery converter and AC-DC onboard battery-charger designs," said Michael Hornkamp, senior director of marketing for gate-driver products at Power Integrations. "AEC-Q100 approval for the SCALE-iDriver gate-driver family enables automotive design engineers to increase system efficiency and, for the first time, benefit from this ultra-safe and reliable isolation technology. Our FluxLink magnetic coupling technology permits data transfer with galvanic isolation and includes a minimum internal 0.4 mm separation through high quality insulation between the low- and high-voltage sides. SCALE-iDriver automotive ICs achieve a new level of driver reliability and isolation safety.”