Infineon shows production GaN devices: Page 2 of 2

November 14, 2018 //By Nick Flaherty
Infineon shows production GaN devices
Infineon Technologies has demonstrated its volume gallium nitride (GaN) devices for the first time at the Electronica 2018 trade show in Munich this week.
the gate voltage at zero, protecting the GaN switch against spurious turn-on, even for the first pulse, which is essential for robust SMPS operations. The GaN gate driver ICs allow constant GaN HEMT switching slew rates, virtually independent from duty cycle or switching frequency. This ensures operational robustness and high power efficiency, and greatly reduces R&D time. Galvanic isolation is integrated for operational robustness in hard switching applications. It also provides protection between the primary and secondary side of an SMPS and between power and logic stages where needed.

The GaN EiceDRIVER 1EDF5673K comes in a 13-pin LGA 5x5 mm, the 1EDF5673F in a 16-pin DSO 150 mil, and the 1EDS5663H in a 16-pin DSO 300 mil package.

The new CoolGaN 600 V e-mode HEMTs are available now and the silicon-based GaN EiceDRIVER ICs can be preordered.

www.infineon.com/gan and www.infineon.com/gan-eicedriver

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