For EV power electronics designers who want to increase efficiency while maintaining high quality, Microchip's AEC-Q101 qualified devices ensure maximum reliability and robustness of systems, as well as a stable and long life of the application. The excellent avalanche behaviour of the diodes reduces the need for external protection circuits, thus reducing system cost and complexity.
With the new SiC SBDs, Microchip builds on 25 years of experience in automotive electronics. The company's SiC technology and IATF-16949:2016-certified manufacturing facilities provide high quality components through flexible manufacturing alternatives and help minimize supply chain risks.
Microchip's internal testing and third-party testing have proven the reliability of Microchip devices compared to other SiC-based devices. Microchip's own SiC SBD robustness tests show 20% higher energy resistance in unclamped inductive switching (UIS) and the lowest leakage currents at elevated temperatures, which increases system life and enables more reliable operation.
The automotive-grade SiC devices complement Microchip's range of controllers, analogue and data connectivity solutions and provide comprehensive system solutions for electric vehicles and charging stations. Microchip also offers 700V, 1200V and 1700V SiC SBD/MOSFET power modules that incorporate the latest generation of SiC chips. In addition, dsPIC digital signal controllers (DSCs) provide high performance, low power consumption and flexible peripherals. The AgileSwitch series of digitally programmable gate drivers accelerates the transition from development to manufacturing.
Microchip's AEC-Q101 qualified SiC SBDs are supported via SPICE and PLECS simulation models and the MPLAB Mindi analogue simulator. Also available is a PLECS reference design model that uses the SBDs (1200 V, 50 A) as part of the power stage: the Vienna 3-phase power factor correction (PFC) reference design.