n-channel MOSFETs target 48V automotive applications

December 16, 2019 //By Christoph Hammerschmidt
n-Channel MOSFETs target 48V Automotive Applications
Toshiba Electronics Europe introduces its first 100V n-channel power MOSFETs for automotive applications in small SMD SOP Advance/WF packages. The devices are specifically designed for modern 48V systems and are suitable for up/boost converters in integrated starter generators (ISG), LED headlamps, motor drives, switching regulators and load switches.

With their low RDS (ON), the XPH4R10ANB and XPH6R30ANB MOSFETs improve the efficiency of automotive systems. The XPH4R10ANB offers the lowest resistance in the industry with only 4.1mΩ, significantly reducing system losses. Both devices are housed in the SOP Advance/WF package with Wettable Flanks. This small package has proven itself in 48V automotive applications and enables automatic optical inspection (AOI) to ensure solder joint quality.

Both MOSFETs are part of Toshiba's U-MOSVIII-H series and offer 100V drain source voltage (UDSS) and a maximum operating temperature of 175°C. The XPH4R10ANB supports a maximum continuous drain current of 70A and pulse currents up to 210A. The values for the XPH6R30ANB are 45A and 135A, respectively.

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