Nexperia GaN FETs make EVs more efficient: Page 2 of 2

September 14, 2020 //By Jean-Pierre Joosting
GaN FETS for reduce power loss in EVs, 5G and IoT
Shipping from Farnell, rugged GaN FETs from Nexperia feature easy gate drive, low RDS(on) and fast, stable switching for more efficient power conversion in electric vehicles.

To support customers seeking to adopt GaN FET technology, Farnell and the element14 community is hosting a webinar with a Ilian Bonov, GaN International Product Marketing Engineer, from Nexperia, to provide a ‘deep dive’ into this new technology. “Designing High-Efficiency and Robust Industrial Power Supplies with Nexperia GaN FETs” will take place on 16th September, 2020 at 2:00 PM BST. The webinar will overview the features of Nexperia cascode technology, benefits in hard and soft switching topologies and include a 4kW Totem Pole PFC Case Study.

The Nexperia Gan FET range is available from Farnell in EMEA, Newark in North America and element14 in APAC.


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