High efficiency, single-channel gate drivers for silicon carbide SiC MOSFETs from Power Integrations are now qualified to AEC-Q100 for automotive use.
The SIC118xKQ SCALE-iDrivers family can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs alongside additional safety and protection features.
The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications, exhibiting rail-to-rail output, fast gate switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management and reinforced isolation.
Critical safety features include Drain to Source Voltage (VDS) monitoring-, SENSE readout, primary and secondary Undervoltage Lock-out (UVLO), current-limited gate drive and Advanced Active Clamping (AAC) which facilitates safe operation and soft turn-off -under fault conditions. AAC in combination with VDS monitoring ensures safe turn-off in less than 2 µs during short-circuit conditions. Gate-drive control and AAC features allow gate resistance to be minimized; this reduces switching losses, maximizing inverter efficiency.