SiC FETs break RDS(on) barrier

December 06, 2019 //By Christoph Hammerschmidt
SiC FETs break RDS(on) barrier
Inverters for electric vehicles and EV battery chargers as well as solid-state circuit breakers have one thing in common: They need power transistors with an RDS(on) as low as possible. This low resistance is crucial to keep losses low. Semiconductor manufacturer UnitedSiC now has introduced a family of power SiC FETs with an RDS(on) of below 10 milliohms. The company claims that this is the lowest RDS(on) on the world market.

The new UF3C/SC product family is designed for high-current applications as inverters for e-cars, EV battery chargers and solid-state circuit breakers at operational voltages of 650V or 1200V, depending on the specific type. They offer an ultra-low on-state resistance of less than 20 mohms; the models UF3SC12000K4S and UF3SC065007K4S even reach values of 8.6 mohm and 6.7 mohm, respectively, at optimum operating temperature of 25°C. Co-packaged with high-performance third generation SiC JFETs, these products have another unique feature: According to UnitedSiC, they are the only standard gate drive SiC devices in the market today.

The new SiC FETs are sintered on silver (Ag) base for low thermal resistance. Their low R(DS)on combined with their temperature characteristics enable the design of inverters with extremely low losses and thus extraordinarily high efficiency of better than 99%. They also can switch at frequencies of higher than 20 kHz (versus 4-8 kHz for IGBTs), which leads to more compact systems.

UnitedSiC's RDS(on) comparison of competitive products

They are drop-in compatible with standard silicon IGBTs and MOSFETs as well as with SiC MOSFET drive voltages. Another feature is their excellent paralleling behavior which makes them ideal for use in solid-state circuit breakers.

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